Charge Traps in All?Inorganic CsPbBr ₃ Perovskite Nanowire Field?Effect Phototransistors

All-inorganic halide perovskite materials have recently emerged as outstanding for optoelectronic applications. However, although critical developing novel technologies, the influence of charge traps on transport in all-inorganic systems still remains elusive. Here, properties cesium lead bromide, nanowire films are probed using a field-effect transistor geometry. Field-effect mobilities ?FET = 4 × 10?3 cm?2 V?1 s?1 and photoresponsivities range R 25 A W?1 demonstrated. Furthermore, both with without illumination is investigated down to cryogenic temperatures. Without illumination, deep dominate mobility freezes out at low Despite presence traps, when illuminating sample, increases by several orders magnitude even phonon-limited characteristics visible. This can be seen an extension notion “defect tolerance” that has solely been associated shallow traps. These findings provide further insight understanding underlines managing open up route optimizing devices such solar cells or phototransistors operable also light intensities.